The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2011
Filed:
Oct. 27, 2008
Shinya Yamaguchi, Mitaka, JP;
Mutsuko Hatano, Kokubunji, JP;
Mitsuharu Tai, Kokubunji, JP;
Sedng-kee Park, Higashimurayama, JP;
Takeo Shiba, Kodaira, JP;
Shinya Yamaguchi, Mitaka, JP;
Mutsuko Hatano, Kokubunji, JP;
Mitsuharu Tai, Kokubunji, JP;
Sedng-Kee Park, Higashimurayama, JP;
Takeo Shiba, Kodaira, JP;
Hitachi Displays, Ltd., Chiba, JP;
Abstract
A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 110% of an intra-grain average film thickness.