The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2007
Filed:
Jul. 22, 2005
Shinya Yamaguchi, Mitaka, JP;
Mutsuko Hatano, Kokubunji, JP;
Mitsuharu Tai, Kokubunji, JP;
Sedng-kee Park, Higashimurayama, JP;
Takeo Shiba, Kodaira, JP;
Shinya Yamaguchi, Mitaka, JP;
Mutsuko Hatano, Kokubunji, JP;
Mitsuharu Tai, Kokubunji, JP;
Sedng-Kee Park, Higashimurayama, JP;
Takeo Shiba, Kodaira, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A thin film semiconductor device which includes an insulating substrate, a semiconductor polycrystal thin film formed over the substrate and a transistor with the thin film as a channel. The polycrystal includes a plurality of crystal grains, with grain boundaries between the crystal grains being recessed. The grain boundaries with the recessed surfaces are the most predominant of all grain boundaries within the channel. With this structure, the polycrystal can be a low temperature polycrystal that can be formed at a temperature of 150° C. or less, thereby achieving a low-cost device with high carrier mobility.