This inventor holds 2 USPTO granted patents. Top assignee: Honeywell G.m.b.h.. Active years: 1997-1999.
Location History:
- Fagan, MN (US) (1997)
- Otsego, MN (US) (1999)
Company Filing History:
Years Active: 1997-1999
Title: Scott T. Reimer: Innovator in Gallium Nitride Technology
Introduction
Scott T. Reimer is a notable inventor based in Fagan, MN (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of gallium nitride materials. With a total of 2 patents, Reimer's work focuses on enhancing the performance of ultraviolet (UV) photodetectors.
Latest Patents
Reimer's latest patents include a process for forming a high gain, wide bandgap gallium nitride. This innovative process involves depositing a layer of aluminum nitride, which serves as a foundation for the gallium nitride layer. The resulting gallium nitride layer exhibits superior UV sensing characteristics, determined through tests measuring sheet resistance and photoluminescent response. Another significant patent is for a high gain ultraviolet photoconductor based on wide bandgap nitrides. This photoconductor features an active layer of gallium nitride with a specific range of net donor sites, making it sensitive to UV radiation. The design criteria ensure that the photodetector maintains high sensitivity and low dark resistance.
Career Highlights
Scott T. Reimer is currently employed at Honeywell GmbH, where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing the capabilities of UV photodetectors, which have applications in various industries.
Collaborations
Reimer has collaborated with notable colleagues, including Robert P. Ulmer and J. David Zook. These partnerships have contributed to the successful development of his patented technologies.
Conclusion
Scott T. Reimer's contributions to gallium nitride technology highlight his role as a leading inventor in the semiconductor field. His innovative patents and collaborations continue to influence advancements in UV detection technologies.