The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 1997
Filed:
Feb. 28, 1995
Barbara G Barany, Falcon Heights, MN (US);
Scott T Reimer, Fagan, MN (US);
Robert P Ulmer, Hopkins, MN (US);
J David Zook, Minneapolis, MN (US);
Honeywell Inc., Minneapolis, MN (US);
Abstract
A photoconductor has an active layer of gallium nitride having approximately 10.sup.15 to 5.times.10.sup.15 net donor sites per cubic centimeter and is sensitive to UV radiation. This photoconductor has at least one of a sheet resistance in the approximate range of 10.sup.4 to 5.times.10.sup.6 ohms/unit area and a relatively low level of photoluminescence in the range from about 430-450 nm when excited with light of energy higher than the bandgap energy of 3.4 eV. These criteria tend to define similar semiconductor materials which can form the active layer of an ultraviolet (UV) photodetector having the improved characteristics of a relatively low dark resistance, high sensitivity over at least a range of UV radiation intensity, and decreasing gain with increasing UV radiation.