The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 13, 1999

Filed:

Jan. 27, 1997
Applicant:
Inventors:

Barbara Goldenberg Barany, Falcon Heights, MN (US);

Scott A McPherson, Eagan, MN (US);

Scott T Reimer, Otsego, MN (US);

Robert P Ulmer, Hopkins, MN (US);

J David Zook, Minneapolis, MN (US);

Maurice L Hitchell, deceased, late of Lakeville, MN (US);

Assignee:

Honeywell Inc., Minneapolis, MN (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438 93 ; 438 57 ;
Abstract

A process for forming a UV sensitive gallium nitride layer includes a step of depositing a layer of aluminum nitride on which the gallium nitride layer is deposited. Two tests, sheet resistance and photoluminescent response of the gallium nitride layer, allow one to determine that a particular gallium nitride layer produced by the process will have the required response to UV radiation. Either a careful calibration which determines a required length of the aluminum nitride deposition time, or the introduction of silicon into the gallium nitride layer during its deposition, has been found to result in deposit of a gallium nitride layer which has superior UV sensing characteristics.


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