Scott D Habermehl

Title: Scott D Habermehl: Innovator in High-Temperature Hybrid Devices

Introduction

Scott D Habermehl is a prominent inventor based in Corrales, NM (US). He has made significant contributions to the field of hybrid CMOS-MEMS devices, holding a total of 6 patents. His work focuses on integrating advanced materials and technologies to enhance device performance in high-temperature environments.

Latest Patents

Habermehl's latest patents include innovative designs such as hybrid CMOS-MEMS devices adapted for high-temperature operation and methods for their manufacture. One notable patent describes a silicon carbide-based MOS integrated circuit that is monolithically integrated with a suspended piezoelectric aluminum nitride member. This integration forms a high-temperature-capable hybrid MEMS-over-MOS structure. The design features a post-MOS passivation layer of silicon carbide, which is deposited over the MOS passivation and overlain by a structural layer of the MEMS device. Electrical contact to refractory metal conductors of the MOS integrated circuit is achieved through tungsten vias that pass vertically through both the structural layer and the post-MOS passivation layer.

Another significant patent involves methods for depositing an alpha-silicon-carbide-containing film at low temperatures. These methods are useful for creating a silicon carbide film, including Alpha-SiC, at temperatures below approximately 1400°C. The process includes introducing a chlorinated hydrocarbon gas and a chlorosilicon gas into a reaction chamber, where they react at low temperatures to grow the silicon carbide film.

Career Highlights

Throughout his career, Scott D Habermehl has worked with notable organizations such as Sandia Corporation and National Technology & Engineering Solutions of Sandia, LLC. His experience in these companies has allowed him to develop and refine his innovative ideas in the field of semiconductor technology.

Collaborations

Habermehl has collaborated with esteemed colleagues, including Jeffry Joseph Sniegowski and Thomas W Krygowski. These partnerships have contributed to the advancement of his research and the successful development of his patented technologies.

Conclusion

Scott D Habermehl is a distinguished inventor whose work in high-temperature hybrid devices has made a significant impact in the field of semiconductor technology. His innovative patents and collaborations reflect his commitment to advancing technology and improving device performance.