The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
Aug. 05, 2014
Applicant:
Sandia Corporation, Albuquerque, NM (US);
Inventor:
Scott D. Habermehl, Corrales, NM (US);
Assignee:
Sandia Corporation, Albuquerque, NM (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/32 (2006.01); C30B 25/16 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/325 (2013.01); C30B 25/165 (2013.01); C30B 29/36 (2013.01); H01L 21/0262 (2013.01); H01L 21/02529 (2013.01);
Abstract
Described methods are useful for depositing a silicon carbide film including Alpha-SiC at low temperatures (e.g., below about 1400° C.), and resulting multi-layer structures and devices. A method includes introducing a chlorinated hydrocarbon gas and a chlorosilicon gas into a reaction chamber, and reacting the chlorinated hydrocarbon gas with the chlorosilicon gas at a temperature of less than about 1400° C. to grow the silicon carbide film. The silicon carbide film so-formed includes Alpha-SiC.