The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2013
Filed:
Mar. 01, 2006
Scott D. Habermehl, Corrales, NM (US);
Roger T. Apodaca, Albuquerque, NM (US);
Scott D. Habermehl, Corrales, NM (US);
Roger T. Apodaca, Albuquerque, NM (US);
Sandia Corporation, Albuquerque, NM (US);
Abstract
An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiNwith a nitrogen content X which is generally in the range of 0<X≦1.2, and preferably 0.5≦X≦1.2. The breakdown voltage Vfor the antifuse can be defined to be as small as a few volts for CMOS applications by controlling the composition and thickness of the SiNlayer. The SiNlayer thickness can also be made sufficiently large so that Poole-Frenkel emission will be the primary electrical conduction mechanism in the antifuse. Different types of electrodes are disclosed including electrodes formed of titanium silicide, aluminum and silicon. Arrays of antifuses can also be formed.