The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 2004

Filed:

Sep. 05, 2002
Applicant:
Inventors:

Jeffry J. Sniegowski, Albuquerque, NM (US);

Thomas W. Krygowski, Cortlandt Manon, NY (US);

Seethambal S. Mani, Albuquerque, NM (US);

Scott D. Habermehl, Corrales, NM (US);

Dale L. Hetherington, Albuquerque, NM (US);

James E. Stevens, Albuquerque, NM (US);

Paul J. Resnick, Albuquerque, NM (US);

Steven R. Volk, Albuquerque, NM (US);

Assignee:

Sandia Corporation, Albuquerque, NM (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract

A process is disclosed for forming a microelectromechanical (MEM) structure on a substrate having from 5 to 6 or more layers of deposited and patterned polysilicon. The process is based on determining a radius of curvature of the substrate which is bowed due to accumulated stress in the layers of polysilicon and a sacrificial material used to buildup the MEM structure, and then providing one or more stress-compensation layers on a backside of the substrate to flatten the substrate and allow further processing.


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