Location History:
- Yorktown Hts., NY (US) (1990 - 1991)
- Yorktown, NY (US) (1997)
- Yorkstown Heights, NY (US) (1998)
- Yorktown Heights, NY (US) (1990 - 2003)
Company Filing History:
Years Active: 1990-2003
Title: Satyendranath Mukherjee: Innovator in Silicon Carbide Technology
Introduction
Satyendranath Mukherjee is a prominent inventor based in Yorktown Heights, NY (US). He holds an impressive portfolio of 16 patents, showcasing his contributions to the field of semiconductor technology, particularly in silicon carbide (SiC) devices.
Latest Patents
Among his latest patents is a method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor (MOSFET). This invention provides a technique for applying an oxide layer to a silicon carbide substrate, enhancing the oxide-substrate interface of the resulting SiC MOSFET. Another significant patent involves a lateral silicon carbide semiconductor device that features a drift region with variable doping levels. This design allows for the creation of compact SiC semiconductor devices, such as high-voltage diodes or MOSFETs, capable of operating at high voltages, high temperatures, and high frequencies.
Career Highlights
Satyendranath Mukherjee has worked with notable companies, including North American Philips Corporation and Philips Electronics North America Corporation. His work in these organizations has significantly advanced the development of semiconductor technologies.
Collaborations
He has collaborated with esteemed colleagues, including Barry M Singer and Manjin J Kim, contributing to various innovative projects in the semiconductor field.
Conclusion
Satyendranath Mukherjee's contributions to silicon carbide technology and his extensive patent portfolio highlight his role as a leading inventor in the semiconductor industry. His work continues to influence advancements in high-performance electronic devices.