The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 1991
Filed:
Aug. 01, 1990
Satyendranath Mukherjee, Yorktown Hts., NY (US);
U.S. Philips Corp., New York, NY (US);
Abstract
A lateral MOS transistor includes a semi-insulating field plate adjacent the surface of the device, over the drift region and extending laterally from the drain electrode toward the gate and source electrodes of the transistor. The field plate is connected at one end to the drain electrode, and at the other end to either the gate electrode of the source electrode. In order to improve the turn-on characteristics of the transistor, a surface-adjoining semiconductor top layer is provided in the drift region of the device, between the channel region and the drain region. This top layer is connected to the channel region at selected locations, and serves to improve device turn-on performance by causing a more rapid decrease in ON resistance at turn-on.