The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 1998

Filed:

Nov. 26, 1996
Applicant:
Inventor:

Satyendranath Mukherjee, Yorkstown Heights, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; G11C / ;
U.S. Cl.
CPC ...
257316 ; 257390 ; 265104 ; 26518505 ;
Abstract

An electrically erasable and programmable read only memory (EEPROM) includes an array of trench memory cells, with each memory cell having a semiconductor drain region adjacent a surface-adjoining portion of the trench. The EEPROM is provided with at least two overlapping metallization layers overlying the memory cells and separated from each other and from the trenches and the drain regions by regions of insulating material. The overlapping metallization layers contact the drain regions of the underlying memory cells through the insulating material. This configuration results in a memory array having a very high packing density.


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