Nagano, Japan

Satoshi Otake

This inventor holds 1 USPTO granted patent. Top assignee: Shinko Electric Industries Co., Ltd.. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Satoshi Otake. Retrieved from https://idiyas.com/inventor/satoshi-otake-gftxu84k

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Satoshi Otake: Innovator in Semiconductor Technology

Introduction

Satoshi Otake is a notable inventor based in Nagano, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and reliability.

Latest Patents

Otake holds a patent for a semiconductor device and method of manufacturing the same. This invention includes a wiring substrate with a first electrode featuring an inverted trapezoidal cross-sectional shape. Additionally, it incorporates a semiconductor chip with a second electrode of the same shape. A metal bonding material connects the tips of both electrodes, while an underfill resin is used to cover the side faces of the electrodes and the bonding material.

Career Highlights

Satoshi Otake is associated with Shinko Electric Industries Co., Ltd., where he has been instrumental in advancing semiconductor technologies. His work has been recognized for its innovative approach and practical applications in the industry.

Collaborations

Otake has collaborated with Kiyoshi Oi, contributing to the development of cutting-edge semiconductor solutions.

Conclusion

Satoshi Otake's contributions to semiconductor technology exemplify the spirit of innovation. His patent reflects a commitment to enhancing device performance and reliability in the electronics industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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