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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9530744 B1

PDFFull Text
Date of Patent:
Dec. 27, 2016

Filed:

Nov. 26, 2014

Semiconductor device and method of manufacturing the same

Applicant:

Shinko Electric Industries Co., Ltd., Nagano-shi, JP;

Inventors:

Kiyoshi Oi, Nagano, JP;

Satoshi Otake, Nagano, JP;

Assignee:

SHINKO ELECTRIC INDUSTRIES CO., LTD., Nagano-shi, JP;

Attorney:

Kratz, Quintos & Hanson, LLP

Primary Examiner:

Zandra Smith

Assistant Examiner:

Evan Clinton

Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 24/13 (2013.01); H01L 23/3135 (2013.01); H01L 23/49811 (2013.01); H01L 24/16 (2013.01); H01L 24/91 (2013.01); H01L 25/105 (2013.01); H01L 24/11 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/03912 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05023 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05568 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11472 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/13017 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/8183 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/83097 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/83862 (2013.01); H01L 2224/94 (2013.01); H01L 2924/15313 (2013.01); H01L 2924/15321 (2013.01);
Abstract

A semiconductor device includes a wiring substrate including a first electrode in which a cross-sectional shape is an inverted trapezoidal shape, a semiconductor chip including a second electrode in which a cross-sectional shape is an inverted trapezoidal shape, a metal bonding material bonding a tip end of the first electrode and a tip end of the second electrode which face each other, and an underfill resin filled between the wiring substrate and the semiconductor chip, the underfill resin covering a side face of each of the first electrode and the second electrode and a side face of the metal bonding material.

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