Mito, Japan

Satoshi Okada

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi-High-Technologies Corporation. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Satoshi Okada. Retrieved from https://idiyas.com/inventor/satoshi-okada-7ztqee57

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Satoshi Okada: Innovator in Charged Particle Beam Technology

Introduction

Satoshi Okada is a prominent inventor based in Mito, Japan. He has made significant contributions to the field of charged particle beam technology. His innovative work has led to the development of advanced apparatuses that enhance performance and reduce noise.

Latest Patents

Satoshi Okada holds a patent for a "Charged particle beam apparatus having noise absorbing arrangements." This invention focuses on arrangements that incorporate noise absorbers specialized for different frequency ranges. The design aims to improve the functionality of charged particle beam apparatuses by minimizing noise interference.

Career Highlights

Satoshi Okada is associated with Hitachi High-Technologies Corporation, where he has been instrumental in advancing technology related to charged particle beams. His expertise and innovative mindset have contributed to the company's reputation as a leader in this field.

Collaborations

Throughout his career, Satoshi has collaborated with notable colleagues, including Daisuke Muto and Masanori Watanabe. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Satoshi Okada's contributions to charged particle beam technology exemplify his dedication to innovation. His patent and collaborations highlight his role as a key figure in advancing this specialized field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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