Seoul, South Korea

Sangho Roh

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sangho Roh. Retrieved from https://idiyas.com/inventor/sangho-roh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: Sangho Roh: Innovator in Semiconductor Technology

Introduction

Sangho Roh is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods of forming hard mask layers.

Latest Patents

Sangho Roh holds a patent titled "Methods of forming a hard mask layer and of fabricating a semiconductor device using the same." This patent describes a method of forming a hard mask layer on a substrate by utilizing nitrous oxide (NO) to create an amorphous carbon layer. The process involves introducing a source of carbon and nitrous oxide under a plasma ambient of an inert gas. The resulting amorphous carbon layer contains nitrogen and oxygen in specific concentrations, which are crucial for the fabrication of semiconductor devices.

Career Highlights

Sangho Roh is associated with Samsung Electronics Co., Ltd., a leading company in the technology sector. His work has been instrumental in advancing semiconductor manufacturing processes, which are vital for modern electronic devices.

Collaborations

Sangho has collaborated with notable colleagues, including Sejun Park and Dohyung Kim, who have contributed to his research and development efforts in the semiconductor field.

Conclusion

Sangho Roh's innovative work in semiconductor technology exemplifies the importance of advancements in this critical industry. His contributions continue to influence the development of efficient manufacturing processes for electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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