The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Aug. 31, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Sejun Park, Seoul, KR;
Dohyung Kim, Uijeongbu-si, KR;
Jaihyung Won, Seoul, KR;
Sangho Roh, Seoul, KR;
Eunsol Shin, Seoul, KR;
Seung Moo Lee, Suwon-si, KR;
Gyuwan Choi, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of forming a hard mask layer on a substrate includes forming an amorphous carbon layer using nitrous oxide (NO). A source of carbon and the nitrous oxide (NO) are introduced to the substrate under a plasma ambient of an inert gas. The amorphous carbon layer has a nitrogen content ranging from about 0.05 at % to about 30 at % and an oxygen content ranging from about 0.05 at % to about 10 at %. In forming a semiconductor device, the hard mask layer is patterned, and a target layer beneath the hard mask layer is etched using the patterned hard mask layer as an etch mask.