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For the Inventor, By the Inventor

Hwaseong-si, South Korea

Sang-Yun Kim

USPTO Granted Patents = 9

Average Co-Inventor Count = 4.1

ph-index = 4

Forward Citations = 33(Granted Patents)


Company Filing History:

goldMedal9 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2013-2021

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9 patents (USPTO):Explore Patents
1. 10957379 - Method of refreshing memory using multiple operating voltages and memory device performing the same (2021-03-23),
2. 10726886 - Memory circuits precharging memory cell arrays and memory devices including the same (2020-07-28),
3. 10665287 - Method of refreshing memory using multiple operating voltages and memory device performing the same (2020-05-26),
4. 9653141 - Method of operating a volatile memory device and a memory controller (2017-05-16),
5. 9355703 - Devices, systems and methods with improved refresh address generation (2016-05-31),
6. 9165637 - Volatile memory device and a memory controller (2015-10-20),
7. 8891324 - Memory device from which dummy edge memory block is removed (2014-11-18),
8. 8482951 - Memory device from which dummy edge memory block is removed (2013-07-09),
9. 8467216 - Semiconductor memory device for reducing bit line coupling noise (2013-06-18),

Title: Innovations of Sang-Yun Kim in Memory Device Technology

Introduction

Sang-Yun Kim is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of memory device technology, holding a total of 9 patents. His work focuses on enhancing the efficiency and functionality of memory devices, which are crucial in modern electronics.

Latest Patents

One of Sang-Yun Kim's latest patents is titled "Method of refreshing memory using multiple operating voltages and memory device performing the same." This invention describes a memory device that operates in various modes, including a normal mode and two self-refresh modes. The first self-refresh mode allows for data retention without an external command, while the second mode has a longer return time to normal operation. The normal mode utilizes a higher operating voltage compared to the second self-refresh mode.

Another notable patent is "Memory circuits precharging memory cell arrays and memory devices including the same." This patent outlines a memory circuit designed to precharge bit lines and complementary bit lines. The circuit includes an equalizer to balance voltage levels and a precharger to set the precharge voltage, enhancing the overall performance of memory devices.

Career Highlights

Sang-Yun Kim is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His work at Samsung has positioned him as a key player in the development of advanced memory technologies. His innovative approaches have contributed to the company's reputation for cutting-edge electronic products.

Collaborations

Throughout his career, Sang-Yun Kim has collaborated with talented individuals such as Tai-Young Ko and Jong-Pil Son. These collaborations have fostered a creative environment that encourages the development of groundbreaking technologies in the field of memory devices.

Conclusion

Sang-Yun Kim's contributions to memory device technology are noteworthy and impactful. His innovative patents and work at Samsung Electronics Co., Ltd. demonstrate his commitment to advancing the field. As technology continues to evolve, his inventions will play a vital role in shaping the future of electronic memory solutions.

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