The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2020

Filed:

Jul. 05, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Suk-Hyun Lim, Suwon-si, KR;

Sang-Yun Kim, Hwaseong-si, KR;

Duk-Ha Park, Suwon-si, KR;

Eun-Ah Kim, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 11/406 (2006.01); G11C 11/4074 (2006.01);
U.S. Cl.
CPC ...
G11C 11/40626 (2013.01); G11C 11/4074 (2013.01); G11C 11/40615 (2013.01);
Abstract

A memory device having memory cells operates in a normal mode, a first self refresh mode, and a second self refresh mode. The first self refresh mode provides a self refresh operation for retaining data stored in the memory cells without an external command. The time required to return to the normal mode from the first self refresh mode is shorter than a reference time. The second self refresh mode also provides the self refresh operation, but a time required to return to the normal mode from the second self refresh mode is longer than the reference time. The normal mode provides a higher operating voltage to the memory cells than does the second self refresh mode.


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