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Suwon, South Korea

Sang-Won Hwang

This inventor holds 26 USPTO granted patents, primarily in Non-Volatile Memory. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2004-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sang-Won Hwang. Retrieved from https://idiyas.com/inventor/sang-won-hwang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 26

% Patents Active = 50.0

Average Co-Inventor Count = 1.9

ph-index = 10

Forward Citations = 295(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2004 - 2010)
  • Suwon-Gyeonggi-do, KR (2012)
  • Suwon-si, KR (2008 - 2018)

Company Filing History:

goldMedal26 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2004-2018

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Areas of Expertise:
Non-Volatile Memory
Flash Memory
Memory Devices
Programming Methods
Multi-Level Cell
NAND Flash
Cache Reading
Self-Boost Programming
Memory Systems
Row Decoder
Leakage Current
Latching Buffer Circuit
26 patents (USPTO):Explore Patents
1. 9928902 - Methods of operating storage devices (2018-03-27),
2. 9343158 - Methods of programming multi-level cell nonvolatile memory devices and devices so operating (2016-05-17),
3. 8446776 - Method of programming memory cells for a non-volatile memory device (2013-05-21),
4. 8339851 - Non-volatile memory device and method of operation therefor (2012-12-25),
5. 8321765 - Method of reading data in non-volatile memory device (2012-11-27),
6. 8295092 - Non-volatile memory device and memory system (2012-10-23),
7. 8081509 - Non-volatile memory device and method of operation therefor (2011-12-20),
8. 7974128 - Flash memory device capable of reduced programming time (2011-07-05),
9. 7911841 - Non-volatile memory device and method for operating the memory device (2011-03-22),
10. 7908425 - Method and device for performing cache reading (2011-03-15),
11. 7817473 - Flash memory device with split string selection line structure (2010-10-19),
12. 7800950 - Memory devices and methods using selective self-boost programming operations (2010-09-21),
13. 7757153 - Multi-bit memory device and memory system (2010-07-13),
14. 7733695 - Non-volatile memory device and method of operation therefor (2010-06-08),
15. 7672162 - Non-volatile memory device, memory system, and LSB read method (2010-03-02),

Title: Innovations of Sang-Won Hwang in Nonvolatile Memory Technology

Introduction

Sang-Won Hwang, based in Suwon-si, South Korea, is a prolific inventor with a significant portfolio of 26 patents. His contributions to the field of nonvolatile memory technology, particularly in storage devices, have made notable advancements in data storage efficiency and processing.

Latest Patents

Among his latest innovations, Sang-Won Hwang has developed methods for operating storage devices that include nonvolatile memory components. One key patent outlines a method for searching a boundary page in a memory block for at least one clean page where data has not yet been written. This invention allows a dummy program operation to be performed, which aids in enhancing the overall efficiency of erase operations on memory blocks.

Another important patent focuses on programming multi-level cell nonvolatile memory devices. This method involves a primary programming step transitioning from an erase level to a target level, while also integrating a preprogramming phase. This multifaceted approach not only optimizes how memory cells are programmed but also improves the performance and longevity of nonvolatile memory devices.

Career Highlights

Sang-Won Hwang works with Samsung Electronics Co., Ltd., where he has harnessed his expertise to innovate the processing and operation of nonvolatile memory. His work is instrumental in developing next-generation storage solutions that cater to the growing demand for more efficient and reliable data management.

Collaborations

In his innovative journey, Sang-Won Hwang has collaborated with notable colleagues, including Jin-wook Lee and Jin-Yub Lee. Their joint efforts have further propelled the advancements in memory technology, contributing to their shared mission of redefining how data storage systems operate.

Conclusion

Sang-Won Hwang's impressive contributions to the field of nonvolatile memory technology exemplify the spirit of innovation that drives the electronics industry forward. With a strong portfolio of patents and collaborative efforts with skilled professionals, Hwang continues to shape the future of storage solutions, making them more efficient and effective for various applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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