The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2010

Filed:

Mar. 29, 2007
Applicants:

Jong-yeol Park, Gyeonggi-do, KR;

Sang-won Hwang, Gyeonggi-do, KR;

Inventors:

Jong-Yeol Park, Gyeonggi-do, KR;

Sang-Won Hwang, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a flash memory device, different self-boosting techniques are selectively applied to a string of serially connected memory cells responsive to a programming voltage applied to a selected word line. For example, non-local self-boosting and local self-boosting may be selectively applied responsive to the programming voltage applied to the selected word line. For example, non-local self-boosting and local self-boosting may be selectively applied to a first string of serially-connected cells responsive to the programming voltage during an incremental step pulse programming (ISPP) of a selected cell of a second string of serially-connected cells.


Find Patent Forward Citations

Park, Jong-Yeol. (2010). Memory devices and methods using selective self-boost programming operations (U.S. Patent No. 7800950). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7800950

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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