The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

Jan. 28, 2014
Applicants:

Jung-ho Song, Suwon-si, KR;

Su-yong Kim, Yongin-si, KR;

Sang-won Hwang, Suwon-si, KR;

Inventors:

Jung-Ho Song, Suwon-si, KR;

Su-Yong Kim, Yongin-si, KR;

Sang-Won Hwang, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/14 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 11/5628 (2013.01); G11C 16/0483 (2013.01); G11C 16/3418 (2013.01); G11C 16/3459 (2013.01);
Abstract

To program in a nonvolatile memory device include a plurality of memory cells that are programmed into multiple states through at least two program steps, a primary program is performed from an erase level to a first target level with respect to the memory cells coupled to a selected word line A preprogram is performed from the erase level to a preprogram level in association with the primary program with respect to the memory cells coupled to the selected word line, where the preprogram level is larger than the erase level and smaller than the first target level A secondary program is performed from the preprogram level to a second target level with respect to the preprogrammed memory cells coupled to the selected word line.


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