Sang-Uhn Cha

This inventor holds 47 USPTO granted patents, primarily in Semiconductor Memory Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2017-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sang-Uhn Cha. Retrieved from https://idiyas.com/inventor/sang-uhn-cha

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 47

% Patents Active = 95.7

Average Co-Inventor Count = 3.1

ph-index = 7

Forward Citations = 207(Granted Patents)

Location History:

Hwasung-si, KR (2018 - 2019)
Suwon-si, KR (2020 - 2023)
Yongin-si, KR (2017 - 2024)

Company Filing History:

47 out of 132,108

Samsung Electronics Co., Ltd.

patents

Years Active: 2017-2024

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Areas of Expertise:

Semiconductor Memory Devices

Memory Systems

Error Correction Circuits

Error Detection Code

Memory Controllers

Data Scrubbing

Parallel Read-Modify-Write

Selective Write-Back

Memory Modules

In-Chip Error Correction

47 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11994948 - Semiconductor memory devices, memory systems including the same and methods of operating memory systems (2024-05-28),

2. 11593199 - Semiconductor memory devices, memory systems including the same and methods of operating memory systems (2023-02-28),

3. 11557332 - Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices (2023-01-17),

4. 11438016 - Error detection code generation circuits of semiconductor devices, memory controllers including the same and semiconductor memory devices including the same (2022-09-06),

5. 11385960 - Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices (2022-07-12),

6. 11239960 - Characterization of in-chip error correction circuits and related semiconductor memory devices/memory systems (2022-02-01),

7. 11231996 - Semiconductor memory devices, memory systems including the same and methods of operating memory systems (2022-01-25),

8. 11223373 - Error detection code generation circuits of semiconductor devices, memory controllers including the same and semiconductor memory devices including the same (2022-01-11),

9. 11216339 - Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices (2022-01-04),

10. 11194657 - Semiconductor memory devices, memory systems, and methods of operating the semiconductor memory devices (2021-12-07),

11. 11031065 - Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices (2021-06-08),

12. 10929225 - Semiconductor memory devices, memory systems including the same and methods of operating memory systems (2021-02-23),

13. 10884852 - Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices (2021-01-05),

14. 10868570 - Error detection code generation circuits of semiconductor devices, memory controllers including the same and semiconductor memory devices including the same (2020-12-15),

15. 10855412 - Characterization of in-chip error correction circuits and related semiconductor memory devices/memory systems (2020-12-01),

Title: Achievements of Sang-Uhn Cha in Semiconductor Memory Innovations

Introduction: Sang-Uhn Cha is a distinguished inventor based in Yongin-si, South Korea. With an astounding portfolio of 47 patents to his name, he has made significant contributions to the field of semiconductor memory devices.

Latest Patents: Among his latest innovations, Cha has developed advanced semiconductor memory devices and memory systems, which include methods for operating these systems. The semiconductor memory device encompasses a memory cell array, an error correction circuit, an error log register, and a control logic circuit. This design optimizes the management of memory bank arrays, featuring multiple pages. The control logic circuit is particularly effective in directing the error correction circuit to execute ECC decoding sequentially on designated pages, allowing for the detection of bit errors. In response to commands from a memory controller, it performs error logging to document page error occurrences, significantly enhancing memory reliability.

Career Highlights: Currently, Sang-Uhn Cha is associated with Samsung Electronics Co., Ltd., a leading technology company renowned for its innovative advancements in the electronics sector. Throughout his career, Cha's expertise in semiconductor technologies has propelled numerous projects, establishing him as a key figure in the innovation of memory systems.

Collaborations: Cha has collaborated closely with notable colleagues, including Hoi-ju Chung and Ye-Sin Ryu, to drive forward the development of sophisticated memory solutions. This teamwork emphasizes the collaborative nature of innovation within the technology landscape.

Conclusion: Sang-Uhn Cha's prolific inventiveness and dedication to semiconductor memory technology continue to influence advancements in the industry. His latest patents demonstrate a commitment to enhancing the functionality and reliability of memory systems, solidifying his status as an influential inventor in the field.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]