Hwaseong-si, South Korea

Sang-Soo Park

USPTO Granted Patents = 32 

Average Co-Inventor Count = 2.4

ph-index = 7

Forward Citations = 152(Granted Patents)


Location History:

  • Ichon-shi, KR (2002 - 2009)
  • Kyoungki-do, KR (2010 - 2011)
  • Hwaseong-Si, GM (2015)
  • Hwaseong-si, KR (2014 - 2020)
  • Gyeonggi-do, KR (2011 - 2022)

Company Filing History:


Years Active: 2002-2022

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32 patents (USPTO):Explore Patents

Title: Innovative Contributions of Sang-Soo Park in Semiconductor Technology

Introduction

Sang-Soo Park, an accomplished inventor based in Hwaseong-si, South Korea, has made significant strides in the field of semiconductor technology. With a remarkable portfolio of 32 patents, Park has consistently pushed the boundaries of innovation, particularly in the fabrication of semiconductor devices.

Latest Patents

One of Park's latest patents is titled "Semiconductor device with air gap and method for fabricating the same." This innovative method entails several intricate steps, including the formation of a first conductive structure over a substrate, the creation of a multi-layer spacer with a non-conformal sacrificial spacer on both sidewalls, and the positioning of a second conductive structure adjacent to the first conductive structure, separated by the multi-layer spacer. A key aspect of this patent is the formation of an air gap achieved by removing the non-conformal sacrificial spacer, followed by the application of a capping layer that covers the second conductive structure and the air gap. The process concludes with creating an opening in the capping layer that exposes the top surface of the second conductive structure and the coupling of a conductive pad in that opening.

Career Highlights

Sang-Soo Park has held pivotal roles in leading companies, notably at Samsung Electronics Co., Ltd. and Hynix Semiconductor Inc. His contributions to these firms have been instrumental in advancing the semiconductor industry, showcasing his innovative capabilities and technical expertise.

Collaborations

Throughout his career, Park has collaborated with talented professionals, including Jae-Yong Jeong and Il Han Park. These partnerships have allowed him to leverage diverse insights and accelerate his innovative endeavors in semiconductor research and development.

Conclusion

Sang-Soo Park stands out as a prolific inventor in the semiconductor domain. His recent patent on semiconductor devices with air gaps exemplifies his expertise and commitment to innovation. As he continues to explore new advancements, the industry eagerly anticipates the potential impact of his future inventions.

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