Seoul, South Korea

Sang-Joon Hwang

This inventor holds 23 USPTO granted patents, primarily in Semiconductor Memory Devices. Top assignees: Samsung Electronics Co., Ltd., Snu Rdb Foundation, Wisconsin Alumni Research Foundation. Active years: 2000-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sang-Joon Hwang. Retrieved from https://idiyas.com/inventor/sang-joon-hwang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 78.3

Average Co-Inventor Count = 3.5

ph-index = 7

Forward Citations = 546(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2006)
  • Gangnam-gu, KR (2016)
  • Seoul, KR (2000 - 2018)
  • Suwon-si, KR (2017 - 2021)

Company Filing History:


Years Active: 2000-2021

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Areas of Expertise:
Memory Module
Processing Device
Redundancy Memory Cells
Sensing Verification
Synchronous Dynamic RAM
Input Buffer
Output Buffer
Data Strobe
Back-Bias Voltage
Repairing Memory Cell
Sense Amplifier Architecture
Integrated Circuit Memory
23 patents (USPTO):Explore Patents

Title: Innovations of Sang-Joon Hwang: A Pioneer in Memory Technology

Introduction: Sang-Joon Hwang, located in Seoul, South Korea, is a renowned inventor in the field of memory technology. With an impressive portfolio of 23 patents, he has made significant contributions to advancements in memory modules and devices. His latest inventions focus on enhancing processing efficiency and memory accessibility.

Latest Patents: Among his most recent patents, Sang-Joon Hwang has developed a memory module, memory device, and processing device featuring a processor mode as well as an innovative memory system. The memory module designed by Hwang includes a memory device, a command/address buffering device, and a processing data buffer. The intricacies of the memory device feature a memory cell array along with two sets of input/output terminals: one for first command/address bits and another for both data bits and second command/address bits. This sophisticated design allows the command/address buffering device to efficiently output the command bits, while the processing data buffer manages data and command bits, ensuring all components collaborately access the memory cell array seamlessly.

Career Highlights: Hwang's impressive career includes notable tenures at prominent companies such as Samsung Electronics Co., Ltd. and Snur & Db Foundation. His work at these organizations has helped propel advancements in memory technology, allowing for more efficient data processing and storage capabilities.

Collaborations: Throughout his career, Sang-Joon Hwang has also collaborated with esteemed colleagues, including Kyo-Min Sohn and Ho-Young Song. Their collective expertise has contributed to groundbreaking innovations within the memory technology sector, further enhancing the efficacy and performance of memory systems.

Conclusion: Sang-Joon Hwang's contributions to the field of memory technology are remarkable, characterized by his numerous patents and collaborations with other innovators. His dedication to advancing memory systems demonstrates the importance of continuous innovation in improving our technological landscape. As the demand for more sophisticated memory solutions grows, Hwang's work remains pivotal in shaping the future of this essential sector.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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