The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2019

Filed:

Oct. 27, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyo-Min Sohn, Yongin-si, KR;

Ho-Young Song, Hwaseong-si, KR;

Sang-Joon Hwang, Suwon-si, KR;

Cheol Kim, Seoul, KR;

Dong-Hyun Sohn, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/44 (2006.01); G11C 29/56 (2006.01); G11B 20/18 (2006.01); G01R 31/3187 (2006.01); G06F 11/27 (2006.01); G06F 11/20 (2006.01); G11C 5/04 (2006.01); G11C 11/40 (2006.01); G11C 17/16 (2006.01); G11C 17/18 (2006.01); G11C 29/02 (2006.01); G11C 29/00 (2006.01); G11C 8/06 (2006.01); G11C 8/10 (2006.01); G11C 11/4078 (2006.01); G11C 11/4094 (2006.01); G11C 11/4096 (2006.01); G11C 29/36 (2006.01); G11C 29/42 (2006.01);
U.S. Cl.
CPC ...
G11C 29/44 (2013.01); G01R 31/3187 (2013.01); G06F 11/2053 (2013.01); G06F 11/27 (2013.01); G11B 20/1816 (2013.01); G11C 5/04 (2013.01); G11C 8/06 (2013.01); G11C 8/10 (2013.01); G11C 11/40 (2013.01); G11C 11/4078 (2013.01); G11C 11/4094 (2013.01); G11C 11/4096 (2013.01); G11C 17/16 (2013.01); G11C 17/18 (2013.01); G11C 29/027 (2013.01); G11C 29/36 (2013.01); G11C 29/42 (2013.01); G11C 29/4401 (2013.01); G11C 29/56 (2013.01); G11C 29/56008 (2013.01); G11C 29/78 (2013.01); G11C 29/785 (2013.01); G11C 2029/4402 (2013.01); G11C 2029/5606 (2013.01);
Abstract

Provided are a method and an apparatus for repairing a memory cell in a memory test system. A test device detects a fail address by testing a memory device according to a test command, and temporarily stores the fail address in a fail address memory (FAM). The fail address is transmitted to the memory device according to a fail address transmission mode, is temporarily stored in a temporary fail address storage of the memory device, and is then stored in an anti-fuse array, which is a non-volatile storage device. To secure the reliability of data, stored data can be read to verify the data and a verification result can be transmitted in series or in parallel to the test device.


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