Kofu, Japan

Sanae Asari

This inventor holds 4 USPTO granted patents. Top assignees: Hitachi Ulsi Systems Co., Ltd., Renesas Electronics Corporation, Renesas Technology Corp.. Active years: 2005-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sanae Asari. Retrieved from https://idiyas.com/inventor/sanae-asari

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 25.0

Average Co-Inventor Count = 7.0

ph-index = 2

Forward Citations = 124(Granted Patents)


Company Filing History:


Years Active: 2005-2011

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4 patents (USPTO):Explore Patents

Title: Sanae Asari: Semiconductor Inventions and Patent Contributions.

Introduction

Sanae Asari is an inventor associated with Kofu, Japan. Her work includes semiconductor integrated circuit technology, and she is credited with 4 patents.

Latest Patents

Asari’s listed latest patent concerns a semiconductor integrated circuit device. It describes circuit elements and wiring on a semiconductor substrate, with first electrodes connected to the circuit. An organic insulating film covers the circuit while leaving openings over the first electrodes. External connecting electrodes and conductive layers on the film provide electrical connections among the external electrodes and the first electrodes.

Career Highlights

Asari’s listed company affiliations include Hitachi ULSI Systems Co., Ltd. and Renesas Electronics Corporation. These organizations work in the semiconductor and electronics industries.

Collaborations

Her listed coworkers include Shinji Nakazato and Takashi Akioka.

Conclusion

Sanae Asari’s patent record reflects contributions to semiconductor integrated circuit design, including structures for insulating and electrically connecting components on a semiconductor substrate.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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