Sanad Bushnaq

USPTO Granted Patents = 15 (Patent Applications = 2)

Average Co-Inventor Count = 1.6

ph-index = 5

Forward Citations = 57(Granted Patents)

Location History:

Kanagawa, JP (2017)
Yokohama Kanagawa, JP (2017 - 2024)

Company Filing History:

11 out of 2,955

Toshiba Memory Corporation

Toshiba Memeory Corporation

patents

Years Active: 2017-2024

where 'Filed Patents' based on already Granted Patents

15 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 11915760 - Semiconductor storage device (2024-02-27),

2. 11657874 - Semiconductor storage device (2023-05-23),

3. 11152069 - Semiconductor storage device (2021-10-19),

4. 11145371 - Semiconductor memory device (2021-10-12),

5. 10937500 - Semiconductor memory device (2021-03-02),

6. 10714182 - Semiconductor memory device (2020-07-14),

7. 10679713 - Semiconductor storage device (2020-06-09),

8. 10580494 - Semiconductor memory device (2020-03-03),

9. 10325667 - Semiconductor storage device (2019-06-18),

10. 10325656 - Semiconductor memory device (2019-06-18),

11. 9953715 - Level shifter (2018-04-24),

12. 9786377 - Memory device (2017-10-10),

13. 9773555 - Semiconductor memory device (2017-09-26),

14. 9767910 - Semiconductor memory device and memory system (2017-09-19),

15. 9767908 - Semiconductor memory device that applies an initial pass voltage followed by a final pass voltage to non-selected word lines during a write operation (2017-09-19),

Title: The Innovative Journey of Sanad Bushnaq

Introduction

Sanad Bushnaq is a prominent inventor based in Yokohama, Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. His work has been instrumental in advancing the capabilities of semiconductor storage devices.

Latest Patents

Among his latest patents, Sanad has developed a semiconductor storage device that includes a first memory string featuring a first memory transistor. This device incorporates a first word line connected to the gate electrode of the first memory transistor, a source line linked to one end of the memory string, and a first connection transistor that connects the first word line to the source line. This innovative design enhances the efficiency and performance of semiconductor storage solutions.

Career Highlights

Sanad has had a distinguished career, working with leading companies in the technology sector. He has been associated with Toshiba Memory Corporation and Kioxia Corporation, where he has contributed to various groundbreaking projects. His expertise in semiconductor technology has made him a valuable asset to these organizations.

Collaborations

Throughout his career, Sanad has collaborated with notable professionals in the field, including Masanobu Shirakawa and Noriyasu Kumazaki. These collaborations have fostered innovation and have led to the development of advanced technologies in semiconductor storage.

Conclusion

Sanad Bushnaq's contributions to semiconductor technology and his impressive portfolio of patents highlight his role as a leading inventor in the industry. His work continues to influence the future of semiconductor storage devices, showcasing the importance of innovation in technology.

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2 patents pending:

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