The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Aug. 30, 2019
Applicant:
Toshiba Memory Corporation, Tokyo, JP;
Inventors:
Sanad Bushnaq, Yokohama Kanagawa, JP;
Noriyasu Kumazaki, Kawasaki Kanagawa, JP;
Masashi Yamaoka, Yokohama Kanagawa, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/08 (2006.01); G11C 16/04 (2006.01); H01L 27/11556 (2017.01); G11C 16/14 (2006.01); G11C 16/24 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 16/0483 (2013.01); G11C 16/14 (2013.01); G11C 16/24 (2013.01); H01L 27/11556 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01);
Abstract
According to one embodiment, a semiconductor storage device includes a first memory string including a first memory transistor, a first word line connected to a gate electrode of the first memory transistor, a source line connected to one end of the memory string, and a first connection transistor connected between the first word line and the source line.