Samuel J Nagalingam

Title: Innovations by Samuel J Nagalingam

Introduction

Samuel J Nagalingam is a prominent inventor based in Los Gatos, CA (US). He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance of MOSFETs and p-type semiconductor devices.

Latest Patents

One of his latest patents is titled "High-performance punchthrough implant method for MOS/VLSI." This method utilizes image reversal lithography to create punchthrough implants, which are essential for developing high-performance MOSFETs. Another notable patent is "Angled lateral pocket implants on p-type semiconductor devices." This innovation significantly improves the punchthrough capacity of p-type semiconductor devices by nonuniformly doping the p-channel with n-type implants, such as phosphorus. The method involves implanting n-type dopants at large angles to form pocket implants within the channel region. The optimization of the dose, angle, and thermal cycle annealing of the implants is crucial for maximizing punchthrough capability without compromising the overall performance of the semiconductor device.

Career Highlights

Samuel J Nagalingam is associated with VLSI Technology, Inc., where he continues to push the boundaries of semiconductor innovation. His expertise in the field has led to advancements that benefit various applications in electronics.

Collaborations

He has collaborated with notable colleagues, including Yu P Han and Yu-Pin Han, contributing to a dynamic work environment that fosters innovation and creativity.

Conclusion

Samuel J Nagalingam's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of high-performance electronic devices.