Vlsi Technology, Inc.

Samuel J Nagalingam

Yu P Han

Yu-Pin Han

Ravi Jhota

A method of making high performance MOSFETs uses image reversal lithography to make punchthrough implants.

High-performance punchthrough implant method for MOS/VLSI

The punchthrough capacity of a p-type semiconductor device is significantly improved by nonuniformly doping the p-channel with n-type implants such as phosphorus. The n-type dopants are implanted at large angles to form pocket implants within the channel region. The dose of the implants, angle of the implants and the thermal cycle annealing of the implants will be optimized for maximum punchthrough capability without substantially detracting from the performance of the semiconductor device.

Angled lateral pocket implants on p-type semiconductor devices

The diffusion of P-type channel-stop implants into regions where P-type channels are to be formed which will connect N-type source and drain regions of a transistor element on a P-type substrate is effectively compensated for through angled implantation of an N-type dopant material into these regions. Angle implantation is performed by tilting and rotating the wafer in the presence of an N-type ion beam.

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Los Gatos, CA, United States of America

Samuel J Nagalingam