The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 1995
Filed:
Sep. 24, 1993
Applicant:
Inventors:
Yu P Han, Dallas, TX (US);
Samuel J Nagalingam, Los Gatos, CA (US);
Assignee:
VLSI Technology, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 45 ; 437229 ; 148D / ;
Abstract
A method of making high performance MOSFETs uses image reversal lithography to make punchthrough implants.
Han, Yu. (1995). High-performance punchthrough implant method for mos/vlsi (U.S. Patent No. 5444008). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5444008
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile