Samuel C Wang

Title: Innovations of Samuel C Wang

Introduction

Samuel C Wang is a notable inventor based in Manlius, NY (US). He has made significant contributions to the field of infrared sensor technology, holding a total of 7 patents. His work focuses on optimizing readout circuits for cryogenically operated devices, showcasing his expertise in electronic engineering.

Latest Patents

One of his latest patents is a multiple channel readout circuit optimized for a cryogenically operated IR sensor head. This invention addresses the need for minimizing thermal leakage in individual channel preamplifiers of charge injection device (CID) IR sensors. The circuit design effectively prevents crosstalk by utilizing a four transistor cascode preamplifier circuit, ensuring that the voltages on the principal current supply path remain stable even when strong signals are present.

Another significant patent is related to push-pull readout of dual gate CID arrays. This invention focuses on charge injection devices for sensing IR image intensity from a two-dimensional array of dual-gate sensing sites. The novel push-pull readout circuit eliminates the pedestal effect caused by capacitive coupling between gates on the same pixel, enhancing the accuracy of the readings.

Career Highlights

Throughout his career, Samuel C Wang has worked with prominent companies, including General Electric Company. His experience in these organizations has contributed to his innovative approach to technology and engineering.

Collaborations

Samuel has collaborated with notable individuals in his field, including John M Swab and Michael L Winn. These partnerships have likely fostered a creative environment that has led to the development of his groundbreaking inventions.

Conclusion

Samuel C Wang's contributions to the field of infrared sensor technology and his innovative patents demonstrate his significant impact as an inventor. His work continues to influence advancements in electronic engineering and sensor technology.