The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 1989
Filed:
May. 31, 1988
Samuel C Wang, Manlius, NY (US);
David N Ludington, Amherst, NH (US);
Other;
Abstract
The invention relates to a multiple channel readout circuit optimized for a cryogenically operated IR sensor head. The circuit is applicable to the individual channel preamplifiers of a charge injection device (CID) IR sensor. Since the thermal leakage must be minimized, the voltages on the principal current supply path to the individual preamplifiers will vary when a strong signal is present on any channel. Crosstalk is avoided by using a four transistor cascode preamplifier circuit having a source follower output, in which the gate of the transistor, which acts as a load to the two cascoded transistors, is isolated from the drain of the load transistor, connected to a gate load node common to the other channels, and the node connected via a single connection of high thermal impedance to a terminal external to the cryogenic environment, at which filtering may be provided as needed.