David N Ludington

Title: David N Ludington: Innovator in Cryogenic Technology

Introduction

David N Ludington is a notable inventor based in New Hartford, NY (US). He has made significant contributions to the field of cryogenic technology, holding a total of 3 patents. His work primarily focuses on enhancing the performance of infrared sensors through innovative circuit designs.

Latest Patents

One of his latest patents is a "Multiple channel readout circuit optimized for a cryogenically operated IR sensor head." This invention addresses the challenges of thermal leakage in cryogenic environments by optimizing the voltages on the current supply path to individual preamplifiers. The design effectively minimizes crosstalk using a four transistor cascode preamplifier circuit, ensuring high performance in sensitive applications.

Another significant patent is the "Readout circuit for an optical sensing charge injection device." This invention introduces a novel readout circuit that facilitates an extended dynamic range for charge injection devices used in optical sensing. The design allows for sensitive, low-level operation by enabling charge accumulation in the potential wells of sensor elements, significantly improving the dynamic range of the CID.

Career Highlights

Throughout his career, David has worked with prominent companies, including General Electric Company. His experience in these organizations has contributed to his expertise in developing advanced technologies in the field of infrared sensing.

Collaborations

David has collaborated with notable professionals in his field, including Samuel C Wang. Their joint efforts have led to advancements in cryogenic technology and sensor design.

Conclusion

David N Ludington's innovative contributions to cryogenic technology and infrared sensing have established him as a significant figure in the field. His patents reflect a commitment to enhancing sensor performance and addressing the challenges of cryogenic environments.