The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 1989
Filed:
Oct. 07, 1988
Samuel C Wang, Manlius, NY (US);
John M Swab, Baldwinsville, NY (US);
Michael L Winn, Liverpool, NY (US);
Other;
Abstract
The invention relates to charge injection devices (CID) for sensing IR image intensity information obtained from a two dimensional array of dual-gate sensing sites on an InSb or HgCdTe substrate, and more particularly to a novel push-pull readout circuit which eliminates the pedestal due to capacitive coupling between gates on the same pixel of a dual gate CID. The CID is scanned in rows and read out in parallel columns. Pedestal cancellation is achieved in one example by resetting the prior row as a selected row is injected. In a second example pedestal cancellation is achieved by adding an additional row which is reset as each row is injected, while in a third example a pedestal cancellation network is provided associated with each column output circuit.