Round Rock, TX, United States of America

Sam Gat-Shang Chu

This inventor holds 28 USPTO granted patents, primarily in Microprocessor Design. Top assignee: International Business Machines Corporation. Active years: 1998-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sam Gat-Shang Chu. Retrieved from https://idiyas.com/inventor/sam-gat-shang-chu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 46.4

Average Co-Inventor Count = 3.8

ph-index = 7

Forward Citations = 164(Granted Patents)


Location History:

  • Austin, TX (US) (1998 - 2005)
  • Round Rock, TX (US) (2004 - 2021)

Company Filing History:


Years Active: 1998-2021

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Areas of Expertise:
Microprocessor
Register File
Memory Circuits
Power Reduction
Dynamic Logic
Soft Error Detection
Transient Noise
Leakage Power
Debug Scheme
Signal Generation
Dynamic RAM
Access Time
28 patents (USPTO):Explore Patents

Title: The Innovative Journey of Sam Gat-Shang Chu

Introduction: Sam Gat-Shang Chu, a talented inventor based in Round Rock, TX, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Sam Gat-Shang Chu holds several patents in the field of artificial intelligence and renewable energy technologies, showcasing his commitment to creating a sustainable future.

Career Highlights: With a background in engineering and a passion for problem-solving, Sam Gat-Shang Chu has led successful projects that have revolutionized the way we approach complex challenges in various industries.

Collaborations: Throughout his career, Sam Gat-Shang Chu has collaborated with leading research institutions and tech companies to bring his ideas to life, demonstrating his ability to work effectively in multidisciplinary teams.

Conclusion: Sam Gat-Shang Chu's dedication to innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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