Singapore, Singapore

Sagar P Karalkar

This inventor holds 1 USPTO granted patent. Top assignee: Globalfoundries U.S. Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sagar P Karalkar. Retrieved from https://idiyas.com/inventor/sagar-p-karalkar

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Sagar P Karalkar: Innovator in Semiconductor Technology

Introduction: Sagar P Karalkar is a notable inventor based in Singapore, recognized for his contributions to semiconductor technology. He has made significant strides in the field, particularly with his work on silicon controlled rectifiers.

Latest Patents: Sagar holds a patent related to silicon controlled rectifiers. The patent focuses on semiconductor structures and methods of manufacture. It describes a structure that includes a first well in a semiconductor substrate, a second well adjacent to the first well, a plurality of shallow trench isolation structures extending into both wells, and at least one gate structure in the first well that abuts one of the shallow trench isolation structures. This innovation is crucial for enhancing the performance and efficiency of semiconductor devices.

Career Highlights: Sagar P Karalkar is currently employed at GlobalFoundries U.S. Inc., a leading company in semiconductor manufacturing. His work at GlobalFoundries has allowed him to collaborate with other talented professionals in the industry.

Collaborations: Among his coworkers are Anindya Nath and Rajendran Krishnasamy, who contribute to the innovative environment at GlobalFoundries. Their collective expertise fosters advancements in semiconductor technology.

Conclusion: Sagar P Karalkar's contributions to the field of semiconductor technology, particularly through his patent on silicon controlled rectifiers, highlight his role as an influential inventor. His work continues to impact the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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