Nara, Japan

Ryusuke Matsuyama


Average Co-Inventor Count = 6.3

ph-index = 3

Forward Citations = 60(Granted Patents)


Company Filing History:


Years Active: 2006-2008

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3 patents (USPTO):Explore Patents

Title: The Innovative Mind of Ryusuke Matsuyama

Introduction

Ryusuke Matsuyama is a prominent inventor based in Nara, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on memory cell units and nonvolatile semiconductor storage devices, showcasing his expertise in innovative electronic solutions.

Latest Patents

Matsuyama's latest patents include a memory cell unit, a nonvolatile semiconductor storage device that incorporates this memory cell unit, and a memory cell array driving method. The memory cell unit features a semiconductor substrate with a source diffusion layer and a column-shaped semiconductor layer. This design includes a drain diffusion layer and a low concentration impurity diffusion layer, enhancing the efficiency of memory cells arranged in a unique configuration. The nonvolatile semiconductor storage device comprises multiple memory cell unit groups, each designed for optimal performance in data storage applications.

Career Highlights

Throughout his career, Matsuyama has worked with notable companies, including Sharp Corporation. His experience in the industry has allowed him to develop cutting-edge technologies that have advanced the field of electronics. His innovative designs have paved the way for improvements in memory storage solutions.

Collaborations

Matsuyama has collaborated with esteemed colleagues such as Fujio Masuoka and Hiroshi Sakuraba. These partnerships have fostered a creative environment that has led to groundbreaking advancements in semiconductor technology.

Conclusion

Ryusuke Matsuyama's contributions to the field of semiconductor technology are noteworthy. His innovative patents and collaborations with industry leaders highlight his role as a key figure in advancing electronic solutions. His work continues to influence the future of memory storage devices.

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