Company Filing History:
Years Active: 1999-2014
Title: Ryuichi Matsuki: Innovator in Semiconductor Technology
Introduction
Ryuichi Matsuki is a prominent inventor based in Nagano, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His innovative work focuses on enhancing the efficiency and performance of semiconductor packages.
Latest Patents
Matsuki's latest patents include a heat radiation component and a method for manufacturing a semiconductor package. The heat radiation component is designed to be integrated with a thermal interface material on a semiconductor device. It features a first layer positioned on one side and a second layer stacked on top, which has a lower coefficient of thermal expansion than the first layer. This design aims to improve heat dissipation in semiconductor applications. The method for manufacturing a semiconductor package involves a build-up wiring layer that includes a metal wiring layer and an insulation resin layer. Additionally, it incorporates a low thermal expansion material layer that is bonded to the rear surface of the build-up wiring layer, enhancing compatibility with semiconductor chips.
Career Highlights
Matsuki is currently employed at Shinko Electric Industries Co., Ltd., where he continues to develop innovative solutions in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor packages, making them more efficient and reliable.
Collaborations
Throughout his career, Matsuki has collaborated with notable colleagues, including Keisuke Ueda and Takaharu Miyamoto. These collaborations have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.
Conclusion
Ryuichi Matsuki is a key figure in the semiconductor industry, with a focus on improving heat management and manufacturing processes. His contributions through his patents and collaborations highlight his commitment to advancing technology in this critical field.