Shinko Electric Industries Co., Ltd.

Ryuichi Matsuki

Takaharu Miyamoto

Keisuke Ueda

Kei Murayama

Michio Horiuchi

Shigetsugu Muramatsu

Shigeaki Suganuma

Masakuni Kitajima

Hiroyuki Miyajima

A heat radiation component configured to be provided through a thermal interface material on a semiconductor device mounted on a board includes a first layer to be positioned on a first side and a second layer stacked on the first layer to be positioned on a second side farther from the semiconductor device than the first side. The coefficient of thermal expansion of the second layer is lower than the coefficient of thermal expansion of the first layer.

Heat radiation component and semiconductor package including same

A semiconductor package includes: a build-up wiring layer including a metal wiring layer and an insulation resin layer; and a low thermal expansion material layer having a coefficient of thermal expansion closer to that of a semiconductor chip mounted on the build-up wiring layer as compared with the insulation resin layer of the build-up wiring layer, the low thermal expansion material layer being bonded to an entire region of a rear surface of the build-up wiring layer corresponding to a region of a front surface of the build-up wiring layer on which the semiconductor chip is mounted.

Method for manufacturing a semiconductor package

Semiconductor package and method for manufacturing the same

Thermal stress caused by a difference in the coefficient of thermal expansion between the mounting substrate and the ceramic substrate acts little on the junction portions of the external connection terminals when a semiconductor device is mounted avoiding such problems that the junction portions are broken or peeled off the mounting substrate. An insulating buffer layer 40 is adhered onto the mounting surface of ceramic substrate 32 having required wiring patterns 34 onto where the external connection terminals 12 will be connected, the insulating buffer layer 40 having a Young's modulus smaller than that of a ceramic material of the ceramic substrate 32 and having electrically insulating property, terminal pads 14 are provided on the outer surface of the insulating buffer layer 40, and the terminal pads 14 and the wiring patterns 34 are electrically connected together through buffer conducting portions 42 provided penetrating through the insulating buffer layer 40 and having a Young's modulus nearly equal to that of the insulating buffer layer 40.

Ceramic circuit board and semiconductor device using same

Growing community of inventors

Nagano, Japan

Ryuichi Matsuki