Toyota, Japan

Ryota Suzuki

This inventor holds 19 USPTO granted patents and 1 published patent application and 4 EPO patents, primarily in Silicon Carbide Semiconductors. Top assignees: Toyota Jidosha Kabushiki Kaisha, Denso Corporation, Mirise Technologies Corporation. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryota Suzuki. Retrieved from https://idiyas.com/inventor/ryota-suzuki-n5czww79

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 19 

% Patents Active = 100.0

 

Average Co-Inventor Count = 2.9

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Toyota, JP (2021 - 2023)
  • Nisshin, JP (2024)

Company Filing History:


Years Active: 2021-2026

Loading Chart...
Loading Chart...
Areas of Expertise:
Battery System
Semiconductor Device
Silicon Carbide
Field Effect Transistor
Data Management
Information Processing
Management Method
Traceability Integration
Switching Element
Information Management
Manufacturing Method
19 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Ryota Suzuki

Introduction

Ryota Suzuki is a prominent inventor based in Toyota, Japan, who has made significant strides in the field of semiconductor technology. With a total of six patents to his name, he has contributed to advancements that showcase his expertise and creativity in engineering. His latest innovations highlight the ongoing evolution of semiconductor devices and their manufacturing processes.

Latest Patents

One of Ryota Suzuki's latest patents is for a semiconductor device and method of manufacturing the same. This innovative semiconductor device incorporates various essential elements, such as a semiconductor layer, a first-conductivity-type layer, a saturation current suppression layer, and trench gate structures. These components work together to optimize the functionality of the semiconductor element, ensuring improved performance and reliability.

Another significant patent involves a silicon carbide semiconductor device with a cell section and an outer periphery section. This invention features an electric field relaxation layer in the surface layer portion of the drift layer within a guard ring section. This design effectively limits electric field concentrations, helping to achieve the required withstand voltage for the SiC semiconductor device.

Career Highlights

Throughout his career, Ryota Suzuki has worked with notable companies such as Denso Corporation and Toyota Jidosha Kabushiki Kaisha. His experience at these organizations has undoubtedly played a crucial role in enhancing his knowledge and developing groundbreaking technologies.

Collaborations

Ryota's collaborations with other talented individuals, such as Yuichi Takeuchi and Yusuke Yamashita, further demonstrate his commitment to innovation. Working alongside skilled professionals allows for the exchange of ideas and fosters an environment conducive to developing advanced solutions in technology.

Conclusion

In conclusion, Ryota Suzuki's contributions to the field of semiconductor technology exemplify the impact of innovative thinking and collaboration. With his impressive portfolio of patents, he continues to be a significant figure in advancing the capabilities of semiconductor devices. His work not only influences current technology but also paves the way for future advancements in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…