Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Mirise Technologies Corporation

Ryota Suzuki

Yuichi Takeuchi

Masahiko Ishii

Yusuke Yamashita

Hidetaka Asano

Keiichi Koga

Sachiko Aoi

Tatsuji Nagaoka

Shuhei Mitani

Aiko Kaji

Naoki Yamamuro

Tsuyoshi Yamamoto

Junya Watanabe

Yoshikazu Jikuhara

Yuki Yamashita

Shigeki Matsumoto

Takuya Kondo

Yohei Iwahashi

Kensuke Nagata

Hitoshi Murakami

Koji Hetsugi

Katsuhiko Hamasaki

Akiko Tamura

Teruyoshi Fujiwara

A control unit of an information processing apparatus acquires product information of each of one or more inclusion products included in a target product based on association information indicating an association relationship of products of companies included in a supply chain. The product information includes traceability-related information of the at one or more inclusion products. The traceability-related information is encrypted with a public key of a certificate authority. The control unit acquires an encrypted integrated result of the traceability-related information by computing the encrypted traceability-related information through secure computation. The control unit decodes the encrypted integrated result of the traceability-related information through the certificate authority.

Information processing apparatus, information processing method, and storage medium for traceability integration

A node of a C company verifies transaction data received from a node of a B company, the transaction data proposing addition of a subject substance to a restriction list. When the node of the C company determines that information indicating that a new proposed subject substance falls under a restricted substance is incorrect by obtaining data on the restricted substance, for example, from the outside (a server apparatus or the like in an external group) and checking whether or not the subject substance falls under the restricted substance, the node of the C company does not approve the proposal for addition of the new subject substance to the restriction list but transmits transaction data that denies the proposal to the node of the B company (an arrow B).

Information management system

When information on a chemical substance is disclosed by a node of an upstream company (S), a controller updates product composition data (S) and determines whether or not the disclosed information on the chemical substance is to be kept secret (S). When the controller determines that the disclosed information on the chemical substance does not have to be kept secret (NO in S), it adds the information on the chemical substance (a restricted substance) received in Sto update public data (S) and generates transaction data including the public data and transmits the transaction data to a node of a target downstream company (S).

Information management system and information management method

A data management system includes a plurality of data management apparatuses, a certification authority group, and a time stamp authority group. In making an application for a proof of existence of invention information, the data management apparatus generates an invention hash, and transmits the invention hash to selected time stamp authorities of the time stamp authority group. Each of the time stamp authorities having received the invention hash generates a time stamp token. The data management apparatus acquires the time stamp token from each of the plurality of time stamp authorities to which the invention hash has been transmitted.

Data management apparatus and data management method

An information management system includes information management apparatuses belonging to A to D companies, respectively, and a platform provider. When a new chemical substance is added as a result of revision of laws and regulations etc. to chemical substances designated under the laws and regulations, the platform provider updates a restriction list and transmits transaction data that proposes update of restriction lists in distributed ledgers to the information management apparatuses. Each of the information management apparatuses approves the transaction data and updates the restriction list thereof. Each of the information management apparatuses discloses information on a chemical substance included in the updated restriction list to an information management apparatus in a downstream company.

A semiconductor device includes a semiconductor element. The semiconductor element has a semiconductor layer, a first-conductivity-type layer, a saturation current suppression layer, a current dispersion layer, a base region, a source region, trench gate structures, an interlayer insulation film, a source electrode, a drain electrode, and a second deep layer. The first-conductivity-type layer is disposed above the semiconductor layer. The saturation current suppression layer disposed above the first-conductivity-type layer includes a first deep layer and a JEFT portion. The base region is disposed above the saturation current suppression layer. The source region and the contact region are disposed above the region. Each of the trench gate structures has a gate trench, a gate insulation film, and a gate electrode. The second deep layer is disposed among the trench gate structures and is connected to the first deep layer.

Semiconductor device and method of manufacturing the same

In a guard ring section of a silicon carbide semiconductor device, an electric field relaxation layer for relaxing an electric field is formed in a surface layer portion of a drift layer, so that electric field is restricted from penetrating between guard rings. Thus, an electric field concentration is relaxed. Accordingly, a SiC semiconductor device having a required withstand voltage is obtained.

Silicon carbide semiconductor device with cell section and outer periphery section

A silicon carbide semiconductor device includes a substrate, a drift layer disposed above the substrate, a base region disposed above the drift layer, a source region disposed above the base region, a gate trench formed deeper than the base region from a surface of the source region, a gate insulating film covering an inner wall surface of the gate trench, a gate electrode disposed on the gate insulating film, an interlayer insulating film covering the gate electrode and the gate insulating film and having a contact hole, a source electrode brought in ohmic contact with the source region through the contact hole, and a drain electrode disposed to a rear surface of the substrate. The source region has a lower impurity concentration on a side close to the base region than on a surface side brought in ohmic contact with the source region.

Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device

A SiC semiconductor device includes a main cell region and sense cell region being electrically isolated by an element isolation portion. The SiC semiconductor device includes a substrate, a first impurity region, a first current dispersion layer, first deep layers, a second current dispersion layer, a second deep layer, a base region, a trench gate structure, a second impurity region, first electrodes and a second electrode. The second impurity region, the first electrodes, and the second electrode are disposed at the main cell region and the sense cell region to form a vertical semiconductor element. The vertical semiconductor element allows a current flowing between the first electrode and the second electrode through a voltage applied to the gate electrode. The spacing interval between the deep layers at the element isolation portion is shorter than or equal to a spacing interval between the deep layers at the main cell region.

Silicon carbide semiconductor device

Silicon carbide semiconductor device, and manufacturing method of the same

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Toyota, Japan

Ryota Suzuki