Omura, Japan

Ryota Suewaka


Average Co-Inventor Count = 4.8

ph-index = 1

Forward Citations = 3(Granted Patents)


Location History:

  • Nagasaki, JP (2007)
  • Omura, JP (2011)

Company Filing History:


Years Active: 2007-2011

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2 patents (USPTO):Explore Patents

Title: Ryota Suewaka: Innovator in Silicon Crystal Technology

Introduction

Ryota Suewaka is a prominent inventor based in Omura, Japan. He has made significant contributions to the field of silicon crystal technology, holding 2 patents that focus on innovative methods for producing high-quality silicon wafers.

Latest Patents

Suewaka's latest patents include a silicon single crystal producing method and an annealed wafer production method. The first patent addresses a technique that reduces void defects on a wafer surface while stabilizing the quality of the annealed wafer. This is achieved by controlling the concentrations of oxygen and nitrogen during the silicon crystal growth process. The second patent focuses on eliminating slip dislocations in single crystal silicon production, ensuring the creation of high-quality silicon ingots and wafers.

Career Highlights

Ryota Suewaka is currently employed at Sumco Techxiv Corporation, where he continues to advance his research and development in silicon technologies. His work has been instrumental in improving the efficiency and quality of silicon wafer production, which is crucial for various electronic applications.

Collaborations

Suewaka has collaborated with notable colleagues, including Yutaka Shiraishi and Shinya Sadohara. Their combined expertise has contributed to the success of their projects and innovations in the field.

Conclusion

Ryota Suewaka's contributions to silicon crystal technology exemplify the impact of innovative thinking in the field of materials science. His patents reflect a commitment to enhancing the quality and efficiency of silicon wafer production, which is vital for the electronics industry.

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