Sumco Techxiv Corporation

Ryota Suewaka

Yutaka Shiraishi

Junsuke Tomioka

Kozo Nakamura

Shiro Yoshino

Shinya Sadohara

Tetsuhiro Iida

Syunji Nonaka

A method in which SSDs are reliably reduced while reducing void defects other than the SSDs on a wafer surface, which is essential for an annealed wafer, and ensuring that BMDs serving as gettering source in a bulk are generated, in order to stabilize the quality of the annealed wafer. Considering that annealing a silicon wafer leads to an increase of density (quantity) of deposits associated with oxygen and nitrogen and forming a core of the SSDs, SSDs are decreased by reducing the density (quantity) of the deposits associated with oxygen and nitrogen by controlling three parameters of oxygen concentration, nitrogen concentration and cooling concentration during the process of pulling and growing the silicon single crystalbefore annealing. Alternatively, SSD is reduced by polishing after annealing.

Silicon single crystal producing method, annealed wafer, and method of producing annealed wafer

A method for eliminating slip dislocations in producing single crystal silicon, a seed crystal capable of eliminating the slip dislocations, a single crystal silicon ingot from which the slip dislocations have been eliminated and a single crystal silicon wafer, are disclosed. Single crystal silicon is produced by dipping a seed crystal in a melt and pulling the seed crystal up along the axis of the seed crystal, using a single crystal () in which the &#x3c;110&#x3e; crystal orientation () is inclined at a predetermined angle &#x3b8; with respect to the axial direction () so that the edge direction () of the {111} crystal plane is inclined with respect to the axial direction (). When single crystal silicon is grown while pulling up a seed crystal by the CZ method, a single crystal silicon ingot of a large diameter and a heavy weight can be pulled up by eliminating slip dislocations from the thick crystal.

Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer

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Omura, Japan

Ryota Suewaka