Ryoji Fujiwara

This inventor holds 27 USPTO granted patents, primarily in Electron Emitting Devices. Top assignees: Canon Kabushiki Kaisha, Kanegafuchi Chemical Industry Co., Ltd.. Active years: 1986-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryoji Fujiwara. Retrieved from https://idiyas.com/inventor/ryoji-fujiwara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 27

% Patents Active = 55.6

Average Co-Inventor Count = 3.3

ph-index = 9

Forward Citations = 211(Granted Patents)

Location History:

Sagamihara, JP (1986 - 1987)
Kamakura, JP (1989 - 1990)
Kanagawa, JP (2006 - 2010)
Chigasaki, JP (1993 - 2012)

Company Filing History:

27 out of 92,994

Canon Kabushiki Kaisha

patents

1 out of 109

Kanegafuchi Chemical Industry Co., Ltd.

patents

where one patent can have more than one assignee

Years Active: 1986-2012

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Areas of Expertise:

Electron-Emitting Device

Image Display Apparatus

Electron Source

Manufacturing Method

Optical Modulation Element

Liquid Crystal Device

Electrochromic Device

Photovoltaic Element

Transparent Electroconductive Film

Ferroelectric Liquid Crystal

Active Matrix Liquid Crystal

Carbon Film

27 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8134288 - Electron-emitting device, electron source, and image display apparatus (2012-03-13),

2. 8125470 - Electron source, image display apparatus, and information display reproducing apparatus (2012-02-28),

3. 8080932 - Electron-emitting device, electron source, image display apparatus and method for manufacturing electron-emitting device (2011-12-20),

4. 8075360 - Electron-emitting device, electron source, image display apparatus, and manufacturing method of electron-emitting device (2011-12-13),

5. 7994701 - Electron-emitting device, electron source, image display apparatus, and manufacturing method of electron-emitting device (2011-08-09),

6. 7811625 - Method for manufacturing electron-emitting device (2010-10-12),

7. 7733006 - Electron-emitting device and manufacturing method thereof (2010-06-08),

8. 7682213 - Method of manufacturing an electron emitting device by terminating a surface of a carbon film with hydrogen (2010-03-23),

9. 7583016 - Producing method for electron-emitting device and electron source, and image display apparatus utilizing producing method for electron-emitting device (2009-09-01),

10. 7400099 - Flat panel image display device (2008-07-15),

11. 7259520 - Electron emission device, electron source, and image display having dipole layer (2007-08-21),

12. 7109663 - Electron emission device, electron source, and image display having dipole layer (2006-09-19),

13. 6106906 - Material for forming electroconductive film, method of forming (2000-08-22),

14. 5838410 - Optical modulation element (1998-11-17),

15. 5675351 - Method and apparatus for driving active matrix liquid crystal device (1997-10-07),

Title: The Innovative Journey of Ryoji Fujiwara

Introduction: Ryoji Fujiwara, a distinguished inventor hailing from Chigasaki, Japan, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Fujiwara's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar power systems that are more efficient and cost-effective.

Career Highlights: With a career spanning over two decades, Fujiwara has worked with leading research institutions and technology companies to bring his inventions to life. His expertise in electrical engineering and sustainable energy solutions has garnered him international recognition.

Collaborations: Throughout his career, Fujiwara has collaborated with top engineers, scientists, and designers to push the boundaries of innovation. His partnerships have led to the creation of cutting-edge products that have revolutionized the industry.

Conclusion: Ryoji Fujiwara's passion for innovation and commitment to creating a more sustainable future continue to inspire the next generation of inventors. His legacy as a visionary in the field of technology is sure to endure for years to come.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]