The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Oct. 17, 2008
Yoji Teramoto, Ebina, JP;
Ryoji Fujiwara, Chigasaki, JP;
Michiyo Nishimura, Sagamihara, JP;
Kazushi Nomura, Sagamihara, JP;
Shunsuke Murakami, Atsugi, JP;
Yoji Teramoto, Ebina, JP;
Ryoji Fujiwara, Chigasaki, JP;
Michiyo Nishimura, Sagamihara, JP;
Kazushi Nomura, Sagamihara, JP;
Shunsuke Murakami, Atsugi, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A manufacturing method of an electron-emitting device including the steps of: preparing a base substrate provided with an insulating or semi-conducting layer in advance and exposing the layer to an atmosphere which contains neutral radical containing hydrogen. It is preferable that the insulating or semi-conducting layer contains metal particles; the insulating or semi-conducting layer is a film containing carbon as a main component; the neutral radical containing hydrogen contains any of H., CH., CH., and CH. or mixture gas thereof; compared with a density of a charged particle in the atmosphere, a density of the neutral radical containing hydrogen in the atmosphere is more than 1,000 times; and a step of exposing the insulating or semi-conducting layer to the atmosphere is a step of making a hydrogen termination by using a plasma apparatus provided with a bias grid.