Canon Kabushiki Kaisha

Kanegafuchi Chemical Industry Co., Ltd.

Ryoji Fujiwara

Shuzo Kaneko

Yoji Teramoto

Tomoko Maruyama

Shunsuke Murakami

Michiyo Nishimura

Tomoko Murakami

Isamu Shimizu

Akio Yoshida

Daisuke Sasaguri

Kazushi Nomura

Takeshi Ichikawa

Akio Maruyama

Etsuro Kishi

Koichi Sato

Hiroshi Matsuda

Chiori Mochizuki

Kazuo Yoshinaga

Yasushi Shimizu

Yasuyuki Watanabe

Akihiko Nagano

Tsuyoshi Shibata

Toshikazu Ohnishi

Kazuya Ishiwata

Hajime Sakata

Taiko Motoi

Yomishi Toshida

Takayuki Ishii

Takeo Eguchi

Yuji Kasanuki

Shinichi Kawate

Shoshiro Saruta

Minori Yamaguchi

Yukitoshi Ohkubo

Akiko Kitao

Noriaki Oguri

Eiji Ozaki

Murakami Tomoko

Tomoro Maruyama

Tomoyuki Umezawa

Masao Yamanobe

An electron-emitting device includes an electron-emitting film containing molybdenum. A spectrum obtained by measuring a surface of the electron-emitting film by X-ray photoelectron spectroscopy has a first peak having a peak top in the range of 229&#xb1;0.5 eV and a sub peak having a peak top in the range of 228.1&#xb1;0.3 eV.

Electron-emitting device, electron source, and image display apparatus

There is provided an electron source including: an insulating substrate; a first wiring that is arranged on the insulating substrate; a second wiring that is arranged on the insulating substrate and intersects with the first wiring; and an electron-emitting device having a cathode electrode provided with an electron-emitting member and a gate electrode arranged above the cathode electrode, which is arranged on the insulating substrate and is separated from an intersecting portion of the first wiring with the second wiring; wherein the first wiring is arranged on the second wiring via an insulating layer; the gate electrode is provided with a plurality of slit-like openings that is arranged in substantially parallel at intervals; and the opening is arranged so that an extended line in a longitudinal direction thereof intersects with the first wiring.

Electron source, image display apparatus, and information display reproducing apparatus

An electron-emitting device of the present invention has an electron-emitting film, and the electron-emitting film is composed of a first layer made of a first material, and a plurality of particles made of a second material whose electric resistivity is lower than that of the first material and provided into the first layer. The first material contains oxygen and nitrogen. A method for manufacturing the electron-emitting device according to the present invention has a step of forming the electron-emitting film, and the electron-emitting film forming step includes a step of forming the plurality of particles made of a second material whose electric resistivity is lower than that of a first material into the first layer made of the first material containing oxygen and nitrogen.

Electron-emitting device, electron source, image display apparatus and method for manufacturing electron-emitting device

A manufacturing method of an electron-emitting device including the steps of: preparing a base substrate provided with an insulating or semi-conducting layer in advance and exposing the layer to an atmosphere which contains neutral radical containing hydrogen. It is preferable that the insulating or semi-conducting layer contains metal particles; the insulating or semi-conducting layer is a film containing carbon as a main component; the neutral radical containing hydrogen contains any of H., CH., CH., and CH. or mixture gas thereof; compared with a density of a charged particle in the atmosphere, a density of the neutral radical containing hydrogen in the atmosphere is more than 1,000 times; and a step of exposing the insulating or semi-conducting layer to the atmosphere is a step of making a hydrogen termination by using a plasma apparatus provided with a bias grid.

Electron-emitting device, electron source, image display apparatus, and manufacturing method of electron-emitting device

An electron-emitting device according to this invention has a cathode electrode, a first electrode, a second electrode, an insulating layer, a gate electrode, and an electron-emitting member. The gate electrode, the insulating layer, and the first electrode respectively have an opening communicating with each other. The electron-emitting member is provided on the cathode electrode, and at least a portion of the electron-emitting member is exposed in the opening. The second electrode is provided in the opening of the first electrode and electrically connected to the cathode electrode.

There is provided an electron-emitting device of a field emission type, with which the spot size of an electron beam is small, an electron emission area is large, highly efficient electron emission is possible with a low voltage, and the manufacturing process is easy. The electron-emitting device includes a layerwhich is electrically connected to a cathode electrode, and a plurality of particleswhich contains a material having a resistivity lower than that of a material constituting the layer, and is wherein a density of particlesin the layeris 1&#xd7;10/cmor more and 5&#xd7;10/cmor less.

Method for manufacturing electron-emitting device

Electron-emitting device and manufacturing method thereof

An electron emission device is provided which has sufficient on/off characteristics and is capable of efficiently emitting electrons with a low voltage. An electron emission device includes a substrate, a cathode electrode, a gate electrode, which are arranged on the substrate, an insulation layer covering the surface of the cathode electrode, and a dipole layer formed by terminating the surface of the insulation layer with hydrogen.

Method of manufacturing an electron emitting device by terminating a surface of a carbon film with hydrogen

The invention is to provide a producing method for an electron emitting device of field emission type, having sufficient on/off characteristics and capable of efficient electron emission at a low voltage. There is provided a producing method for an electron emitting device including steps of preparing a plurality of electroconductive particles each covered with an insulation material having a thickness of 10 nm or less at least on a part of a surface of the particle, and forming a dipole layer on a surface of the insulation material covering each of the plurality of electroconductive particles.

Producing method for electron-emitting device and electron source, and image display apparatus utilizing producing method for electron-emitting device

A flat panel image display device includes a rear plate including plural electron emission elements, a face plate disposed opposed to the rear plate, fluorescent members being disposed on a surface of the face plate opposed to the rear plate, and the fluorescent members being covered with a metal back film, and a voltage applying unit to apply an acceleration voltage of 8 kV to 15 kV between the rear plate and the face plate. In addition, the metal back film has a getter material, and a current luminance characteristic of the fluorescent member satisfies &#x3b3;&#x2267;0.9 if L=kl&#x3b3; , wherein L is luminance, l is an irradiation current, and k is a constant.

Flat panel image display device

Electron emission device, electron source, and image display having dipole layer

A material for forming an electroconductive film on a substrate comprises a metal and hydrophobic and hydrophilic components. Preferably, the material comprises an organometallic complex expressed by general formula (R.sup.1 COO).sub.n M(NR.sup.2 R.sup.3 R.sup.4).sub.m wherein R.sup.1 represents an alkyl group, each of R.sup.2, R.sup.3 and R.sup.4 represents a hydrogen atom, an alkyl group or an alkenyl group, M represents a metal element and each of n and m represents an integer equal to or greater than 1. The material can be used for forming an electroconductive film of an electron-emitting device or forming a liquid crystal alignment film.

Material for forming electroconductive film, method of forming

An optical modulation element, in which a pixel surrounding a ferroelectric liquid crystal layer and an column shaped orientation layer is formed between a pair of electrodes. The orientation layer is formed by a high-molecular polymer in which an ultrafine granular conductive substance may be dispersed. External voltage applied across the electrodes in response to gradation signals performs gradation drivings.

Optical modulation element

An active matrix liquid crystal device is driven by sequentially applying a first scanning pulse to reset each pixel on a first selected line, a second scanning pulse to write each pixel on a second selected line and a third scanning pulse to provide a voltage signal which is equal to or less than the optical threshold value of the liquid crystal to each pixel on a third selected line. According to the driving method, the first, second and third selected lines are spaced at a predetermined number of lines from each other, and a sum of time integrated values of the applied voltage signals is or approaches zero.

Method and apparatus for driving active matrix liquid crystal device

Growing community of inventors

Chigasaki, Japan

Ryoji Fujiwara