Gunma, Japan

Ryo Kanda

This inventor holds 10 USPTO granted patents. Top assignee: Sanyo Electric Co., Ltd.. Active years: 2006-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryo Kanda. Retrieved from https://idiyas.com/inventor/ryo-kanda-0h3zae2b

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 80.0

Average Co-Inventor Count = 3.1

ph-index = 4

Forward Citations = 36(Granted Patents)


Company Filing History:


Years Active: 2006-2010

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10 patents (USPTO):Explore Patents

Title: Ryo Kanda: Innovator in Semiconductor Technology

Introduction

Ryo Kanda is a prominent inventor based in Gunma, Japan, known for his significant contributions to semiconductor technology. With a total of 10 patents to his name, Kanda has made remarkable advancements in the field, particularly in the design and manufacturing of semiconductor devices.

Latest Patents

Kanda's latest patents include a semiconductor integrated circuit device that features an N-type embedded diffusion region. This innovative design is strategically placed between a substrate and an epitaxial layer in first and second island regions, which serve as a small signal section. The N-type embedded diffusion region connects to N-type diffusion regions that have supply potential. This structure effectively partitions the substrate and the epitaxial layer, preventing the inflow of free carriers generated from a power NPN transistor, thus avoiding malfunctions in the small signal section.

Another notable patent is for a semiconductor device and method of manufacturing the same. This invention addresses the challenges faced by conventional semiconductor devices, such as MOS transistors with offset gate structures, which struggle with size reduction. Kanda's design incorporates a LOCOS oxide film formed between the source and drain regions in an N-type epitaxial layer. The gate electrode is positioned on the LOCOS oxide layer, allowing for high positional accuracy in forming the P-type diffusion layers as the source and drain regions. This advancement enables a significant reduction in the device size of the MOS transistor.

Career Highlights

Kanda has built a successful career at Sanyo Electric Co., Ltd., where he has been instrumental in developing cutting-edge semiconductor technologies. His work has not only contributed to the company's reputation but has also advanced the industry as a whole.

Collaborations

Throughout his career, Kanda has collaborated with notable colleagues, including Shuichi Kikuchi and Seiji Otake. These partnerships have fostered innovation and have led to the successful development of various semiconductor technologies.

Conclusion

Ryo Kanda's contributions to semiconductor technology through his patents and work at Sanyo Electric Co., Ltd. highlight his role as a key innovator in the field. His advancements continue to influence the design and functionality of semiconductor devices, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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