The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2007
Filed:
Feb. 22, 2006
Ryo Kanda, Gunma, JP;
Shuichi Kikuchi, Gunma, JP;
Seiji Otake, Saitama, JP;
Hirotsugu Hata, Gunma, JP;
Ryo Kanda, Gunma, JP;
Shuichi Kikuchi, Gunma, JP;
Seiji Otake, Saitama, JP;
Hirotsugu Hata, Gunma, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
According to a semiconductor device of an embodiment of the present invention, a P-type buried diffusion layer is formed across a substrate and an epitaxial layer. An N-type buried diffusion layer is formed in the P-type buried diffusion layer. An overvoltage protective PN junction region is formed below an element formation region. A breakdown voltage of the PN junction region is lower than a source-drain breakdown voltage. This structure prevents a breakdown current from concentratedly flowing into the PN junction region and protects the semiconductor device from overvoltage.